Conveners
Workshop N°2: Novel perspectives for radiation detection materials
- Ivana Capan (Ruđer Bošković Institute, Croatia)
- Takahiro Makino (National Institutes for Quantum and Radiological Science and Technology)
Description
The recent advancements in the fabrication of high-quality wafers, materials synthesis, and understanding of the influence and effects of radiation (including extraterrestrial radiation) on materials have enabled remarkable and novel perspectives for radiation detection. Besides the well-known Group IV semiconductors, wide-bandgap semiconductors such as SiC, GaN, and Ga2O3 are becoming the driving force for radiation detection materials with impressive radiation hardness. Moreover, research on wide-bandgap semiconductor nanostructures (OD, 1D, 2D, and 3D) indicates the potential future trends. It is reasonable to expect that devices based on semiconductor nanostructures will gain more attention and enable new advancements.
This Workshop is dedicated to all aspects related to the growth, synthesis, characterization, and applications of crystalline materials for radiation detection. The main aim is to provide an overview of the current challenges and future perspectives.
Silicon Carbide (SiC) semiconductor radiation detectors offer many advantages for measurement applications in high-temperature and high-radiation environments. In addition to possessing many of the advantages of conventional Si radiation detectors, the relatively wide band gap for SiC (3.27 eV at 300 °C for 4H-SiC) leads to detector leakage currents that are more than three orders of...
Detectors based on wide bandgap semiconductors and with high radiation hardness are very promising for many applications. The commercial availability of high-quality crystalline material is required for the preparation of high-grade radiation detectors. The 4H-SiC and diamonds are good candidates in term of harsh environment operation. Detectors based on SiC and diamond can operate at higher...
Silicon Carbide (SiC)-based radiation detectors are promising candidates for neutron flux monitoring in extreme nuclear environments due to their high radiation resistance, wide bandgap energy, and excellent thermal stability. This study presents the results of irradiation campaigns conducted in different neutron fields to assess the performance and reliability of 4H-SiC P+N junction diodes...
We report the effects, on the optical properties (photoluminescence and Raman scattering spectra), of high energy (70MeV) proton irradiation of bulk silicon carbide (SiC), at different doses. SiC has risen to prominence in the semiconductor industry for applications in high power and high-speed switching applications, especially in the field of electric vehicles and solar energy inverter...
Semiconducting metal oxides possess a range of beneficial properties that have enabled their widespread use in applications such as photocatalysis, solar cells, and sensors. In gas sensing, metal oxides demonstrate strong performance; however, their limitations include low selectivity and the need for high operating temperatures. This work explores a strategy to overcome these challenges by...
